for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 1 gaas hemt mmic low noise amplifier, 1 - 11 ghz v03.0111 general description features functional diagram noise f igure: 1.5 db @ 4 ghz gain: 17 db p 1db o utput p ower: +18 dbm s upply voltage: +5v @ 55 ma o utput ip 3: +30 dbm 50 o hm matched i nput/ o utput 24 l ead p lastic 4x4mm sm t p ackage: 16mm 2 electrical specifcations , t a = +25 c, vdd= +5v, idd = 55 ma [2] typical applications this h m c753 lp 4 e is ideal for: ? p oint-to- p oint r adios ? p oint-to- m ulti- p oint r adios ? m ilitary & s pace ? test i nstrumentation the h m c753 lp 4 e is a gaas mmi c l ow noise w ideband amplifer housed in a leadless 4x4 mm plastic surface mount package. the amplifer oper- ates between 1 and 11 ghz, providing up to 16.5 db of small signal gain, 1.5 db noise fgure, and output ip 3 of +30 dbm, while requiring only 55 ma from a +5v supply. the p 1db output power of up to +18 dbm enables the l na to function as a lo driver for balanced, i /q or image reject mixers. the h m c- 753 lp 4 e also features i / o s that are dc blocked and internally matched to 50 o hms, making it ideal for high capacity microwave radios or v s at applications. this versatile l na is also available in die form as the h m c-a l h444. hmc753lp4e p arameter m in. typ. m ax. m in. typ. m ax. units f requency r ange 1 - 6 6 - 11 ghz gain 14 16.5 10 14 db gain variation over temperature 0.004 0.008 db / c noise f igure 1.5 2 2 2.7 db i nput r eturn l oss 11 8 db o utput r eturn l oss 18 12 db o utput p ower for 1 db compression 18 15 dbm s aturated o utput p ower ( p sat) 20 17 dbm o utput third o rder i ntercept ( ip 3) 30 28 dbm s upply current ( i dd) (vdd = 5v, set vgg2 = 1.5v, vgg1 = -0.8v typ.) 55 55 ma
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 2 hmc753lp4e v03.0111 gaas hemt mmic low noise amplifier, 1 - 11 ghz gain vs. temperature [1] output return loss vs. temperature broadband gain & return loss [1] input return loss vs. temperature output ip3 vs. temperature noise figure vs. temperature [1] [1] board loss subtracted out for gain, power and noise fgure measurement -25 -15 -5 5 15 25 0 2 4 6 8 10 12 14 s11 s22 s21 response (db) frequency (ghz) -25 -20 -15 -10 -5 0 1 3 5 7 9 11 +25c +85c -40c return loss (db) frequency (ghz) 0 2 4 6 8 10 1 3 5 7 9 11 +25c +85c -40c noise figure (db) frequency (ghz) -25 -20 -15 -10 -5 0 1 3 5 7 9 11 +25c +85c -40c return loss (db) frequency (ghz) 10 12 14 16 18 1 3 5 7 9 11 +25c +85c -40c gain (db) frequency (ghz) 5 10 15 20 25 30 35 1 3 5 7 9 11 +25c +85c -40c ip3 (dbm) frequency (ghz)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 3 hmc753lp4e v03.0111 gaas hemt mmic low noise amplifier, 1 - 11 ghz psat vs. temperature [1] power compression @ 6 ghz [1] p1db vs. temperature [1] reverse isolation vs. temperature gain, noise figure & power vs. supply voltage @ 6 ghz [1] [1] board loss subtracted out for gain, power and noise fgure measurement -4 0 4 8 12 16 20 24 -20 -15 -10 -5 0 5 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm) -60 -50 -40 -30 -20 -10 0 1 3 5 7 9 11 +25c +85c -40c isolation (db) frequency (ghz) 4 8 12 16 20 24 1 3 5 7 9 11 +25c +85c -40c psat (dbm) frequency (ghz) 0 5 10 15 20 25 1 3 5 7 9 11 +25c +85c -40c p1db (dbm) frequency (ghz) 8 10 12 14 16 18 20 22 0 1 2 3 4 5 6 7 4.5 5 5.5 gain (db), p1db (dbm) noise figure (db) vdd (v)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 4 outline drawing absolute maximum ratings ele ct ros tat ic se n si t i v e de v ic e o b ser v e hand li ng pre caut io n s drain bias voltage +6.0v rf i nput p ower 12 dbm gate bias voltage, vgg1 -1 to 0.3v gate bias voltage, vgg2 0 to 2.5v channel temperature 180 c continuous p diss (t = 85 c) (derate 8.4 m w /c above 85 c) 0.8 w thermal r esistance (channel to die bottom) 119 c/ w s torage temperature -65 to +150 c o perating temperature -40 to +85 c hmc753lp4e v03.0111 gaas hemt mmic low noise amplifier, 1 - 11 ghz n ot es : 1. p ackag e b o dy m at eri a l : low s t ress i nj e ct io n mol d e d pl a s t i c sili ca and sili c o n impre gnat e d. 2. le ad and g ro und p add le m at eri a l : c opper a llo y. 3. le ad and g ro und p add le pl at i ng: 100% m att e t i n 4. d ime n sio n s a re i n i nch es [ millime t ers ]. 5. le ad sp ac i ng t oler anc e is n o n-cu m u l at i v e . 6. p ad bu rr le ngth s ha ll b e 0.15mm m ax. p ad bu rr h ei ght s ha ll b e 0.05mm m ax. 7. p ackag e w a rp s ha ll n ot e xc ee d 0.05mm 8. a ll g ro und le ad s and g ro und p add le m u s t b e sol d ere d to p cb rf g ro und. 9. refer to h i tt i t e a ppli cat io n n ot e for s ugg es t e d p cb l and p att er n. p art number p ackage body m aterial l ead f inish p ackage m arking [1] h m c753 lp 4 e r oh s -compliant l ow s tress i njection m olded p lastic 100% matte s n [2] 753 xxxx [1] 4-digit lot number xxxx [2] m ax peak refow temperature of 260 c package information
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 5 hmc753lp4e v03.0111 gaas hemt mmic low noise amplifier, 1 - 11 ghz p in number f unction description i nterface s chematic 1, 2, 4 - 7, 12 - 15, 17 - 19, 24 gnd p ackage bottom has exposed metal paddle that must be connected to rf /dc ground. 3 rfi n this pad is ac coupled and matched to 50 o hms. 8, 9 vgg2, 1 gate control for amplifer. p lease follow mmi c amplifer bias - ing p rocedure application note. s ee assembly for required external components. 10 vdd p ower s upply voltage for the amplifer. s ee assembly for required external components. 11, 20 - 23 n/c the pins are not connected internally; however, all data shown herein was measured with these pins connected to rf /dc ground externally. 16 rfo ut this pad is ac coupled and matched to 50 o hms. pin descriptions application circuit
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 6 hmc753lp4e v03.0111 gaas hemt mmic low noise amplifier, 1 - 11 ghz i tem description j1, j2 sm a connector j3 - j6 dc p in c1 - c3 100p f capacitor, 0402 p kg. c4 - c6 10,000p f capacitor, 0603 p kg. c7 - c9 4.7 f capacitor, tantalum u1 h m c753 lp 4 e amplifer p cb [2] 122824 e valuation p cb [3] [1] r eference this number when ordering complete evaluation p cb [2] circuit board m aterial: r ogers 4350 or arlon 25 fr list of materials for evaluation pcb 122826 [1] the circuit board used in this application should use rf circuit design techniques. s ignal lines should have 50 o hm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation board should be mounted to an appro - priate heat sink. the evaluation circuit board shown is available from hittite upon request. evaluation pcb
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